Intersubband Energy Differences of Delta-Doped Quantum Wells in External Electric Field

Viktor Tulupenko, Volodymyr Akimov, Roman Demediuk, Anton Tiutiunnyk, Carlos Duque, Dmitrii Sushchenko, Oksana Fomina, Alvaro Morales, David Laroze

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

The energy differences between subbands of a semiconductor quantum well delta-doped inside the well can be tuned by electronic temperature. The effect can be used in a novel schematic of a tunable semiconductor optical device. Here we study numerically the dynamics of the difference between two lower size-quantized subbands against electronic temperature and external transverse electric field in 20 nm wide SiGe/Si doped with a hydrogenic donor to the edge and the center of the well.

Original languageEnglish
Title of host publication2022 IEEE 41st International Conference on Electronics and Nanotechnology, ELNANO 2022 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages133-136
Number of pages4
ISBN (Electronic)9781665469227
DOIs
StatePublished - 2022
Event41st IEEE International Conference on Electronics and Nanotechnology, ELNANO 2022 - Kyiv, Ukraine
Duration: 10 Oct 202214 Oct 2022

Publication series

Name2022 IEEE 41st International Conference on Electronics and Nanotechnology, ELNANO 2022 - Proceedings

Conference

Conference41st IEEE International Conference on Electronics and Nanotechnology, ELNANO 2022
Country/TerritoryUkraine
CityKyiv
Period10/10/2214/10/22

Keywords

  • electric field
  • modulation doping
  • shallow impurity
  • SiGe quantum wells

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